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STP55NF06L Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP55NF06L Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() 1/12 August 2002 STP55NF06L - STP55NF06LFP STB55NF06L - STB55NF06L-1 N-CHANNEL 60V - 0.014 Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET (1) Starting Tj=25°C, ID=27.5A, VDD=30V (2) ISD ≤ 55 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. s TYPICAL RDS(on) = 0.014Ω s EXCEPTIONAL dv/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS (q) Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 60 V 60 V 60 V 60 V <0.018 Ω <0.018 Ω <0.018 Ω <0.018 Ω 55 A 55 A 55 A 55 A Symbol Parameter Value Unit STP55NF06L STB55NF06L/-1 STP55NF06LFP VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuous) at TC = 25°C 55 30 A ID Drain Current (continuous) at TC = 100°C 39 21 A IDM (l) Drain Current (pulsed) 220 120 A PTOT Total Dissipation at TC = 25°C 95 30 W Derating Factor 0.63 0.2 W/°C dv/dt (2) Peak Diode Recovery voltage slope 20 V/ns EAS (1) Single Pulse Avalanche Energy 300 mJ VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature – 55 to 175 °C Tj Max. Operating Junction Temperature TO-220 1 2 3 1 2 3 TO-220FP 1 3 1 2 3 I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM |
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