STP90NF03L datasheet(2/9 Pages) STMICROELECTRONICS

Il numero della parte	STP90NF03L

Spiegazioni elettronici	N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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2 / 9 page

STP90NF03L/STB90NF03L-1

2/9

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

ON /OFF

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

VDGR

Drain-gate Voltage (RGS =20 kΩ)

VGS

Gate- source Voltage

±20

Drain Current (continuous) at TC =25°C

Drain Current (continuous) at TC =100°C

IDM ( )

Drain Current (pulsed)

360

PTOT

Total Dissipation at TC = 25°C

150

Derating Factor

0.73

W/°C

Tstg

Storage Temperature

–65 to 175

°C

Max. Operating Junction Temperature

175

°C

Rthj-case

Thermal Resistance Junction-case Max

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±20V

±100

ID(on)

On State Drain Current

VDS >ID(on) xRDS(on)max,

VGS = 10V

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID =45 A

0.0056

0.0065

Ω

VGS =5V, ID =45 A

0.007

0.012

Ω

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