BUL49D_08 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

BUL49D - BULB49D

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Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0)

VCE = 850 V

VCE = 850 V Tc = 125 °C

100

500

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = 9 V

100

µA

V(BR)EBO

Emitter-base brakdown

voltage (IC = 0)

IE =10 mA

VCEO(sus)

(1)

Pulsed duration = 300 ms, duty cycle

≤1.5%

Collector-emitter

sustaining voltage (IB = 0)

IC =10 mA

450

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC =1 A

_ IB =0.2 A

IC =2 A

_ _

IB =0.4 A

IC =4 A __ _

IB =0.8 A

0.1

0.3

0.6

1.2

VBE(sat)

(1)

Base-emitter saturation

voltage

IC =1 A

_ IB =0.2 A

IC =4 A

_ IB =0.8 A

1.3

hFE

(1)

DC current gain

IC =10 mA

VCE =5 V

IC =500 mA

VCE =5 V

IC =7 A

VCE =10 V

VCEW

(1)

Maximum collector-

emitter voltage without

snubber

IC =8 A

VBB= -2.5 V

L =50

µH

RBB =0

tp =10 µs

450

Resistive load

Storage time

Fall time

VCC =250 V

IC =2 A

IB1=-IB2 =400 mA

(see Figure 12)

0.8

µs

Inductive load

Storage time

Fall time

VCL =300 V

IC =4 A

IB(on) =800 mA RBB(off) =0

VBE(off) =-5 V

L =1 mH

(see Figure 13)

0.6

1.3

100

µs

Diode forward voltage

IC = 3 A

1.5

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