STPS30150CT datasheet(2/6 Pages) STMICROELECTRONICS

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STPS30150CT/CW/CFP

2/6

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220FPAB

Per diode

Total

3.3

°C/W

TO-220AB

Per diode

Total

1.6

0.85

TO-247

Per diode

Total

1.5

0.8

Rth (c)

TO-220FPAB

Coupling

2.6

TO-220AB

Coupling

0.1

TO-247

Coupling

0.1

THERMAL RESISTANCES

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR =VRRM

6.5

µA

Tj = 125°C

VF **

Forward voltage drop

Tj = 25

°CIF = 15 A

0.92

Tj = 125°C

IF = 15 A

0.69

0.75

Tj=25

°CIF =30 A

Tj = 125°C

IF = 30 A

0.8

0.86

Pulse test :

* tp=5ms,

δ <2%

** tp = 380 µs,

δ <2%

To evaluate the conduction losses use the following equation:

P=0.64xIF(AV) + 0.0073 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

0 1 2 3 4 5 6 7 8 9 1011 1213 1415 1617 18

IF(av) (A)

PF(av)(W)

δ = 0.05

δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

TO-220FPAB

TO-220AB/TO-247/I²PAK/D²PAK

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5, per diode).

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