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STP5NK50Z Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP5NK50Z
Spiegazioni elettronici  N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET
PDF  17 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5NK50Z Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 2.2 A
1.22
1.5
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance VDS = 15 V , ID = 2.2 A
3.1
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
535
75
17
pF
pF
pF
COSS eq (3).
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 400 V
45
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 250 V, ID = 2.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
15
10
32
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 4.4 A,
VGS = 10 V
(see Figure 22)
20
4
10
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
4.4
17.6
A
A
VSD (1)
Forward On Voltage
ISD = 4.4 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4.4 A, di/dt = 100 A/µs
VDD = 30V, Tj = 150°C
(see Figure 20)
310
1425
9.2
ns
nC
A



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