STPS40L45CT datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STPS40L45CT/CW

2/6

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage cur-

rent

Tj = 25°C

VR =VRRM

0.6

Tj = 125°C

140

280

VF *

Forward voltage

drop

Tj=25

°CIF =20 A

0.53

Tj = 125°C

IF =20 A

0.42

0.49

Tj = 25°C

IF =40 A

0.69

Tj = 125°C

IF =40 A

0.6

0.7

Pulse test:*tp=380 µs,

δ <2%

To evaluate the conduction losses use the following equation :

P=0.28xIF(AV) + 0.0105 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

Total

1.5

0.8

°C/W

Rth(c)

Coupling

0.1

°C/W

THERMAL RESISTANCES

1012141618202224

IF(av) (A)

PF(av)(W)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

100

125

150

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5, per diode)

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