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2SC1472 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte 2SC1472
Spiegazioni elettronici  Silicon NPN Epitaxial, Darlington
PDF  6 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC1472 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

  2SC1472 Datasheet HTML 1Page - Renesas Technology Corp 2SC1472 Datasheet HTML 2Page - Renesas Technology Corp 2SC1472 Datasheet HTML 3Page - Renesas Technology Corp 2SC1472 Datasheet HTML 4Page - Renesas Technology Corp 2SC1472 Datasheet HTML 5Page - Renesas Technology Corp 2SC1472 Datasheet HTML 6Page - Renesas Technology Corp  
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2SC1472(K)
Rev.2.00 Aug 10, 2005 page 4 of 5
Base Current IB (mA)
2.4
2.0
1.6
1.2
0.8
0.4
0
1100
30
300
3
10
1,000
Collector to Emitter Saturation
Voltage vs. Base Current
Pulse
Ta = 25
°C
IC = 500 mA
20 50 100 200
75
Collector Current IC (mA)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1100
20
200
210
550
500
Base to Emitter Saturation
Voltage vs. Collector Current
Pulse
IC = 1,000 IB
Ta = –50°
C
–25
25
50
100
0
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
10
8
6
4
2
0
0.1
30
3
1.0
10
0.3
Input and Output Capacitance vs. Voltage
f = 1 MHz
Cob(IE = 0)
Cib(IC = 0)
Base Current IC (mA)
30
10
3
1.0
0.3
0.1
0.03
0.3
30
10
100
1.0
3
300
Switching Time vs. Collector Current
toff
tstg
ton
td
IC = 100 IB1 = –100 IB2
VCC = 10.5 V
Switching Time Test Circuit
50
50
0.002
–6 V
10.5 V
D.U.T.
CRT
P.G.
tr, tf
≤ 15 ns
PW ³ 10
µs
duty ratio
≤ 10%
+
–
50
0.002
+
–
Unit R :
Ω
C :
µF
13 V
0
0
10%
Response Waveform
90%
ton
toff
td
tstg
Input
Output
90%
10%
10%
90%



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