STS11NF30L datasheet(1/6 Pages) STMICROELECTRONICS

Il numero della parte	STS11NF30L

Spiegazioni elettronici	N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STS11NF30L

N-CHANNEL 30V - 0.009

Ω - 11A SO-8

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.014

Ω @5V

s

TYPICAL Qg = 19 nC @ 4.5V

s

OPTIMAL RDS(on) xQg TRADE-OFF

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique ”Single

Feature Size

™” strip-based process. The resul-

ting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND

OPTIMISED FOR HIGH EFFICIENCY CPU

CORE DC/DC CONVERTERS FOR MOBILE

PCs

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

SO-8

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Un it

VDS

Drain-source Volt age (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

G ate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC

Drain Current (continuous) at Tc =100

oC

11

7

A

IDM(

•)

Drain Current (pulsed)

44

A

Ptot

T otal Dissipation at Tc =25

oC

2.5

W

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STS11NF30L

30 V

< 0.012

Ω

11 A

1/6

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