STS7PF30L datasheet(1/6 Pages) STMICROELECTRONICS

Il numero della parte	STS7PF30L

Spiegazioni elettronici	P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET??II POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

December 2002

STS7PF30L

P-CHANNEL 30V - 0.016

Ω -7A SO-8

STripFET™ II POWER MOSFET

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

s

TYPICAL RDS(on) = 0.016Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power Mosfet is the latest development of ST-

Microelectronics unique “Single Feature Size

™”

strip-based process. The resulting transistor shows

extremely high packing density for low on-resis-

tance, rugged avalanche characteristics and less

critical alignment steps therefore a remarkable man-

ufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN CELLULAR

PHONES

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STS7PF30L

30 V

< 0.021

Ω

7A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

30

V

VGS

Gate- source Voltage

±20

V

ID

Drain Current (continuous) at TC = 25°C

7A

ID

Drain Current (continuous) at TC = 100°C

4.4

A

IDM

Drain Current (pulsed)

28

A

PTOT

Total Dissipation at TC = 25°C

2.5

W

SO-8

INTERNAL SCHEMATIC DIAGRAM

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STMicroelectronics	STS7PF30L	234Kb / 11P	P-CHANNEL 30V - 0.16廓 - 7A - SO-8 STripFET??II Power MOSFET 09-Nov-2005
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