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STSJ100NH3LL Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STSJ100NH3LL
Spiegazioni elettronici  N-CHANNEL 30V - 0.0027 ohm - 100A PowerSO-8??STripFET??III POWER MOSFET FOR DC-DC CONVERSION
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STSJ100NH3LL Scheda tecnica(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STSJ100NH3LL
N-CHANNEL 30V - 0.0027
Ω - 100A PowerSO-8™
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION
s
TYPICAL RDS(on) = 0.0027 Ω @ 10V
s
OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
The STSJ100NH3LL utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This process compled to unique
metallization
techniques
realizes
the
most
advanced low voltage MOSFET in SO-8 ever
produced. The exposed slug reduces the Rthj-c
improving the current capability.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
TYPE
VDSS
RDS(on)
ID
STSJ100NH3LL
30 V
<0.0035
Ω
100 A
PowerSO-8™
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 18
V
ID
Drain Current (continuous) at TC = 25°C
100
A
ID
Drain Current (continuous) at TC = 25°C (#)
22
A
ID
Drain Current (continuous) at TC = 100°C
62.5
A
IDM(•)
Drain Current (pulsed)
400
A
Ptot
Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
70
3
W
W


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