STT3PF20V datasheet(1/8 Pages) STMICROELECTRONICS

Il numero della parte	STT3PF20V

Spiegazioni elettronici	P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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October 2002

.

STT3PF20V

P-CHANNEL 20V - 0.14

W - 2.2A SOT23-6L

2.7-DRIVE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.14

W (@4.5V)

s

TYPICAL RDS(on) = 0.20

W (@2.7V)

s

ULTRA LOW THRESHOLD GATE DRIVE

(2.7V)

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC-DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

CELLULAR

MARKING

s

STP2

TYPE

VDSS

RDS(on)

ID

STT3PF20V

!ÃW

1Ã!ÃWÃ5#$W

1Ã!$ÃWÃ5!&W

!!Ã6

SOT23-6L

ABSOLUTE MAXIMUM RATINGS

(

) Pulse width limited by safe operating area.

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

20

V

VDGR

Drain-gate Voltage (RGS = 20 k

W)

20

V

VGS

Gate- source Voltage

± 12

V

ID

Drain Current (continuous) at TC = 25°C

2.2

A

ID

Drain Current (continuous) at TC = 100°C

1.39

A

IDM(

)

Drain Current (pulsed)

8.8

A

Ptot

Total Dissipation at TC = 25°C

1.6

W

INTERNAL SCHEMATIC DIAGRAM

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