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STTA806DI Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STTA806DI Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() P1(W) 012 345678 0 2 4 6 8 10 12 14 16 18 =0 . 2 =0 . 5 =1 IF(av)(A) T =tp/T tp =0 . 1 Fig. 1: Conduction losses versus average current. 0.1 1 10 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 MAXIMUM VALUES IFM(A) Tj=125 C o VFM(V) Fig. 2: Forward voltage drop versus forward current. Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. 0 100 200 300 400 500 600 700 800 900 1000 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 IRM(A) VR=400V IF= 8A IF= 4A 90% CONFIDENCE Tj=125 C o IF= 16A dIF/dt(A/ s) Fig. 4: Peak reverse recovery current versus dIF/dt. 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 180 200 trr(ns) VR=400V 90% CONFIDENCE Tj=125 C o dIF/dt(A/ s) IF= 8A IF=4 A IF=1 6A Fig. 5: Reverse recovery time versus dIF/dt. 0 100 200 300 400 500 600 700 800 900 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 S factor VR=400V IF<2xI F( av) Typical values Tj=125 C o dIF/dt( A/ s) Fig. 6: Softness factor (tb/ta) versus dIF/dt. STTA806D/DI/G 3/9 |
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