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HAF2007 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte HAF2007
Spiegazioni elettronici  Silicon N Channel MOSFET Series Power Switching
PDF  9 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2007 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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HAF2007(L), HAF2007(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
Main Characteristics
40
30
20
10
0
0
50
100
150
200
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50 100
25
20
15
10
5
0
2
04
6
8
10
10 V
VGS = 3.5 V
0
0
12
3
4
5
100
µs
1 ms
PW
=
10
ms
Operation in
this area is
limited by RDS (on)
5
4
3
2
1
8 V
6 V
5 V
4 V
VDS = 10 V
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
0.25
0.20
0.15
0.10
0.05
0
2
04
6
8
10
500
0.1
0.2
0.5
1
2
5
10
200
100
20
50
10
1 A
ID = 2 A
0.5 A
20
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
DC
Operation
(Tc
=
25
°C)
Tc = –25
°C
25
°C
Pulse Test
VGS = 4 V
10 V
Thermal shut down
Operation area
Ta = 25
°C
75
°C



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