HAF2021 datasheet(3/9 Pages) RENESAS

3 / 9 page

HAF2021(L), HAF2021(S)

Rev.2.00, Mar.05.2004, page 3 of 8

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

ID1

——A

VGS = 6 V, VDS = 10 V

Drain current

ID2

——10

VGS = 1.2 V, VDS = 10 V

Drain to source breakdown voltage

V(BR)DSS

——V

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

——V

IG = 300

µA, VDS = 0

Gate to source breakdown voltage

V(BR)GSS

–2.5

—

IG = –100

µA, VDS = 0

Gate to source leak current

IGSS1

—

100

µAVGS = 6 V, VDS = 0

IGSS2

——50

µAVGS = 3.5 V, VDS = 0

IGSS3

——1

µAVGS = 1.2 V, VDS = 0

IGSS4

—

–100

µAVGS = –2.4 V, VDS = 0

Input current (shut down)

IGS(op)1

—0.6

—mA

VGS = 6 V, VDS = 0

IGS(op)2

—0.35

—

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

——10

µAVDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.2

—

3.4

ID = 1 mA, VDS = 10 V

Forward transfer admittance

|yfs|

1550—

ID = 25 A, VDS = 10 V

Note3

Static drain to source on state

resistance

RDS(on)

—8

Ω

ID = 25 A, VGS = 10 V

Note3

Static drain to source on state

resistance

RDS(on)

—9.5

Ω

ID = 25 A, VGS = 6 V

Note3

Output capacitance

Coss

—

1450

—

VDS = 10 V , VGS = 0, f = 1 MHz

Turn-on delay time

td(on)

—20

—

µs

ID = 25 A, VGS = 10 V

Rise time

—75

—

µs

RL = 1.2

Ω

Turn-off delay time

td(off)

—3

—µs

Fall time

—2.6

—µs

Body–drain diode forward voltage

VDF

—0.9

—V

IF = 50 A, VGS = 0

Body–drain diode reverse

recovery time

trr

—

110

—

IF = 50 A, VGS = 0

diF/ dt =50 A/µs

Over load shut down

operation time

Note4

tos

—0.8

—ms

VGS = 6 V, VDD = 16 V

Notes: 3. Pulse test

4. Including the junction temperature rise of the over loaded condition.

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