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STU6NA90 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STU6NA90 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA s TYPICAL RDS(on) = 1.5 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s REPETITIVE AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STU6NA90 900 V < 2 Ω 5.8 A March 1996 1 2 3 Max220 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 900 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 5.8 A ID Drain Current (continuous) at Tc = 100 o C 3.7 A IDM( •) Drain Current (pulsed) 23.2 A Ptot Total Dissipation at Tc = 25 o C 145 W Derating Factor 1.16 W/ oC Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area 1/5 |
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