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BB502C Scheda tecnica(PDF) 5 Page - Renesas Technology Corp

Il numero della parte BB502C
Spiegazioni elettronici  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB502C Scheda tecnica(HTML) 5 Page - Renesas Technology Corp

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BB502C
Rev.6.00 Apr 27, 2006 page 5 of 10
200
150
100
50
0
50
100
150
200
0
12
3
4
5
20
16
12
8
4
VG2S = 4 V
VG1 = VDS
20
16
12
8
4
0
12
3
4
5
20
16
12
8
4
0
12
34
5
VDS = 5 V
RG = 120 kΩ
VDS = 5 V
RG = 180 kΩ
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
330
kΩ
270
kΩ
180
kΩ
220
kΩ
2 V
VG2S = 1 V
4 V
3 V
VG2S = 1 V
3 V
4 V
2 V
20
16
12
8
4
0
12
3
4
5
VDS = 5 V
RG = 270 kΩ
0
1
234
5
30
24
18
12
6
VDS = 5 V
RG = 120 kΩ
f = 1 kHz
Drain Current vs. Gate1 Voltage
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
2 V
VG2S = 1 V
4 V
3 V
4 V
2 V
3 V
VG2S = 1 V



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