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M5M5V216ATP Scheda tecnica(PDF) 7 Page - Renesas Technology Corp |
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M5M5V216ATP Scheda tecnica(HTML) 7 Page - Renesas Technology Corp |
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7 / 9 page ![]() M5M5V216ATP,RT revision-03, 14.Jan.'03 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM MITSUBISHI LSIs 6 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S low , ov erlaps BC1 and/or BC2 low and W low. Note 6: Don't apply inv erted phase signal externally when DQ pin is in output mode. Note 5: When the f alling edge of W is simultaneously or priorto the f alling edge of BC1 and/or BC2 or the f alling edge of S, th (D) tsu (D) DQ1~16 tsu (BC1) or tsu (BC2) trec (W) tsu (A) tCW A0~16 W Write cycle (BC control mode) DATA IN STABLE (Note3) (Note3) (Note4) (Note5) th (D) tsu (D) DQ1~16 tsu (S) trec (W) tsu (A) tCW A0~16 W S Write cycle (S control mode) DATA IN STABLE (Note3) (Note3) (Note4) (Note5) (Note3) (Note3) S BC1 BC2 and / or (Note3) (Note3) (Note4) BC1 BC2 and / or the outputs are maintained in the high impedance state. |
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