W45NM60 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW45NM60

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

600

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

µA

VDS = Max rating, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±30V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 22.5A

0.09

0.11

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward transconductance

VDS > ID(on) x RDS(on)max, ID=

22.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz, VGS = 0

3800

1250

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0V, VDS = 0V to 480V

340

Gate input resistance

f=1 MHz Gate DC Bias = 0

test signal level = 20mV

open drain

1.4

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400V, ID = 45A,

VGS = 10V

Figure 14

134

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