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STY30NA50 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STY30NA50 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA s TYPICAL RDS(on) = 0.15 Ω s EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP s ± 30V GATE TO SOURCE VOLTAGE RATING s REPETITIVE AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION T he Max247 TM package is a new high volume power package exibiting the same f oot print as t he industry standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space wit h respect to larger packages. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STY30NA50 500 V < 0. 175 Ω 30 A March 1996 Max247 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (RGS =20 k Ω) 500 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC30 A ID Drain Current (continuous) at Tc =100 oC19 A IDM( •) Drain Current (pulsed) 120 A Ptot Total Dissipation at Tc =25 oC 300 W Derat ing Factor 2.4 W/ oC Tstg St orage Temperature -55 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area 1/4 |
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