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12P10G-TN3-R Scheda tecnica(PDF) 1 Page - Unisonic Technologies |
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12P10G-TN3-R Scheda tecnica(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD 12P10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-262.a 100V P-CHANNEL MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.29Ω @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain Lead-free: 12P10L Halogen-free: 12P10G ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing 12P10-TN3-R 12P10L-TN3-R 12P10G-TN3-R TO-252 G D S Tape Reel 12P10-TN3-T 12P10L-TN3-T 12P10G-TN3-T TO-252 G D S Tube |
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