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AP6015 Scheda tecnica(PDF) 5 Page - Diodes Incorporated

Il numero della parte AP6015
Spiegazioni elettronici  High Efficiency Step-Down Low Power DC-DC Converter
PDF  18 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AP6015 Scheda tecnica(HTML) 5 Page - Diodes Incorporated

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AP6015
High Efficiency Step-Down Low Power DC-DC Converter
AP6015 Rev.
2
5 of 18
AUGUST 2008
www.diodes.com
© Diodes Incorporated
Electrical Characteristics (Continued)
Over recommended operating free-air temperature range, VI=3.6V, VO=2.5V, IO=300 mA, EN=VIN. (unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
Power switch and current limit
VI=VGS=3.6V; I=200mA
200
280
410
P-channel MOSFET on-resistance
VI=VGS=2V; I=200mA
-
480
-
m
Ω
P-channel leakage current
VDS=5.5V
-
-
1
μA
VI=VGS=3.6V; IO=200mA
200
280
410
N-channel MOSFET on-resistance
VI=VGS=2V; IO=200mA
-
500
-
m
Ω
RDS(on)
N-channel leakage current
VDS=5.5V
-
-
1
μA
I(LIM)
P-channel current limit
2.5V
≤V
I≤5.5V
1200
-
1600
mA
Power good output (see Note 5)
Power good threshold
Feedback voltage falling
88%
VO
92%
VO
94%
VO
V(PG)
Power good hysteresis
2.5% VO
V
VOL
PG output low voltage
V(FB)=0.8×VO nominal;
I(sink)=10μA
-
-
0.3
V
ILKG
PG output leakage current
V(FB)=VO nominal
0.01
1
μA
Minimum supply voltage for valid
power good signal
1.2
-
-
V
Oscillator
FS
Oscillator frequency
800
1000
1200
KHz
Output
VO
Adjustable output voltage range
0.8
5.5
V
VREF
Reference voltage
0.784
0.8
0.816
V
AP6015-Adj
VI=2.5V to 5.5V;
0mA
≤ I
O ≤ 800mA
-3%
-
4%
AP6015-1.8V
10mA
≤ I
O ≤ 800mA
-3%
-
3%
VI=2.7V to 5.5V;
0mA
≤ I
O ≤ 800mA
-3%
-
4%
AP6015-2.5V
10mA
≤ I
O ≤ 800mA
-3%
-
3%
VI=3.6V to 5.5V;
0mA
≤ I
O ≤ 800mA
-3%
-
4%
VO
Fixed output
voltage
(see Note 6)
AP6015-3.3V
10mA
≤ I
O ≤ 800mA
-3%
-
3%
V
Line regulation
VI= VO +0.5V (min.2V)
to 6.0V; IO=10mA
0.3
%/V
Load regulation
VI=5.0V;
IO=10mA to 800mA
0.8
%
VI=5V; VO=3.3V; IO=300mA
η
Efficiency
VI=3.6V; VO=2.5V; IO=200mA
94
%
Start-up time
IO=0mA, time from
active EN to VO
0.4
1
4
ms
θ
JA
Thermal Resistance
Junction-to-Ambient
MSOP-10L (Note 7)
161
oC/W
θ
JC
Thermal Resistance
Junction-to-Case
MSOP-10L (Note 7)
39
oC/W
Notes:
5. Power good is not valid for the first 100
μs after EN goes high. Please refer to the application section for more information.
6. The output voltage accuracy includes line and load regulation over the full temperature range.
7. Test condition for MSOP-10L: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,
double sided FR-4 PCB



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