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STS12NH3LL Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STS12NH3LL Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() November 2007 Rev 9 1/13 13 STS12NH3LL N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET™ Power MOSFET Features ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Switching losses reduced ■ Low input capacitance ■ Low threshold device Application ■ Switching applications Description This series is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It’s therefore ideal for high-density converters in telecom and computer applications. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STS12NH3LL 30 V <0.0105 Ω 12 A SO-8 Table 1. Device summary Order code Marking Packag Packaging STS12NH3LL 12H3LL SO-8 Tape & reel www.st.com |
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