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STS17NH3LL Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STS17NH3LL
Spiegazioni elettronici  N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripFET??Power MOSFET for DC-DC conversion
PDF  12 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS17NH3LL Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STS17NH3LL
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
1
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
VGS = 4.5 V, ID = 8.5 A
0.004
0.005
0.0057
0.0075
Ω
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=25 V, f=1 MHz
VGS = 0
1810
565
41
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID=17 A
VGS=4.5 V
(see Figure 14)
18
4.8
5.3
24
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
0.5
1.5
3
Ω



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