VB30200C datasheet(1/5 Pages) VISHAY

Il numero della parte	VB30200C

Spiegazioni elettronici	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A

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V30200C, VB30200C & VI30200C

Vishay General Semiconductor

Document Number: 89014

Revision: 31-Jul-08

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.526 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

TO-262AA package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, TO-263AB and TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

2 x 15 A

VRRM

200 V

IFSM

250 A

VF at IF = 15 A

0.648 V

TJ max.

150 °C

TO-220AB

1

2

3

PIN 1

PIN 2

CASE

PIN 3

V30200C

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

VI30200C

VB30200C

TMBS

®

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30200C

VB30200C

VI30200C

UNIT

Maximum repetitive peak reverse voltage

VRRM

200

V

Maximum average forward rectified current

(Fig. 1)

per device

per diode

IF(AV)

30

15

A

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load per diode

IFSM

250

A

Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C

EAS

100

mJ

Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode

IRRM

1.0

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/µs

Operating junction and storage temperature range

TJ, TSTG

- 40 to + 150

°C

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