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TLMS3201 Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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TLMS3201 Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 14 page ![]() www.vishay.com 2 Document Number 83146 Rev. 1.5, 24-Sep-07 Vishay Semiconductors TLMK/O/S/Y320. Note: 1) T amb = 25 °C, unless otherwise specified Note: 1) T amb = 25 °C, unless otherwise specified Note: 1) T amb = 25 °C, unless otherwise specified ABSOLUTE MAXIMUM RATINGS1) TLMK32.., TLMS32.., TLMO32.., TLMY32.. PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 70 mA Power dissipation Tamb ≤ 65 °C (290 K/W), Tamb ≤ 70 °C (270 K/W) Ptot 180 mW Junction temperature Tj 125 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Thermal resistance junction/ ambient mounted on PC board FR4 optional paddesign (see page 11) RthJA 290 K/W mounted on PC board FR4 recommended paddesign (see page 10) RthJA 270 K/W OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMK32.., RED PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT Luminous intensity IF = 50 mA TLMK3200 IV 200 500 mcd TLMK3201 IV 250 800 mcd TLMK3202 IV 320 800 mcd TLMK3203 IV 400 1250 mcd Luminous flux/Luminous intensity φ V/IV 3mlm/mcd Dominant wavelength IF = 50 mA λ d 611 617 622 nm Peak wavelength IF = 50 mA λ p 624 nm Spectral bandwidth at 50 % Irel max IF = 50 mA Δλ 18 nm Angle of half intensity IF = 50 mA ϕ ± 60 deg Forward voltage IF = 50 mA VF 1.85 2.1 2.55 V Reverse current VR = 5 V VR 0.01 10 µA OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMS32.., RED PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT Luminous intensity IF = 50 mA TLMS3200 IV 160 300 mcd TLMS3201 IV 160 400 mcd TLMS3202 IV 250 800 mcd Luminous flux/Luminous intensity φ V/IV 3mlm/mcd Dominant wavelength IF = 50 mA λ d 626 630 638 nm Peak wavelength IF = 50 mA λ p 641 nm Spectral bandwidth at 50 % Irel max IF = 50 mA Δλ 17 nm Angle of half intensity IF = 50 mA ϕ ± 60 deg Forward voltage IF = 50 mA VF 1.85 2.1 2.55 V Reverse current VR = 5 V VR 0.01 10 µA |
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