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VSKTF18012HKP Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte VSKTF18012HKP
Spiegazioni elettronici  Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 180 A
PDF  9 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSKTF18012HKP Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: ind-modules@vishay.com
Document Number: 93685
2
Revision: 22-Apr-08
VSK.F180..P Series
Vishay High Power Products
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 180 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
370
530
565
800
2400
3150
A
400 Hz
435
650
670
1000
1540
2050
2500 Hz
290
430
490
720
610
830
5000 Hz
240
345
390
540
390
540
10 000 Hz
170
270
290
390
-
-
Recovery voltage Vr
50
50
50
V
Voltage before turn-on Vd
80 % VDRM
80 % VDRM
80 % VDRM
Rise of on-state current dl/dt
50
-
-
A/µs
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10/0.47
10/0.47
10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
180
A
85
°C
Maximum RMS current
IT(RMS)
As AC switch
400
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7130
t = 8.3 ms
7470
t = 10 ms
100 % VRRM
reapplied
6000
t = 8.3 ms
6280
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
255
kA2s
t = 8.3 ms
232
t = 10 ms
100 % VRRM
reapplied
180
t = 8.3 ms
164
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
2550
kA2
√s
Low level value or threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.30
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.38
Low level value on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.90
m
Ω
High level value on-state slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.71
Maximum on-state voltage drop
VTM
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.84
V
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, Ig = 1A
1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM



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