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THDT58S1 Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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THDT58S1 Scheda tecnica(HTML) 6 Page - STMicroelectronics |
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6 / 7 page ![]() FUNCTIONAL DESCRIPTION Line A Protection = - For positive Surges versus GND, the diode D1 will conduct - For negative Surges versus GND, the Protection device P1 will trigger at a maximum voltage equal to the VBO. Line B Protection = - For Surges on line B, the operatingmode is the same, D2 or P2 is activated. P1 P2 D1 D2 Line A Line B Tip Ring RING RELAY RING GENERATOR LINE A LINE B THDT58S -V SLIC T E S T R E L A Y bat THBTXXX PTC PTC TIP RING S THDT58S1 APPLICATION CIRCUIT Typical SLIC protection concept THDT58S / THDT58S1 6/7 |
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