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THDT6511D Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte THDT6511D
Spiegazioni elettronici  TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
PDF  6 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

THDT6511D Scheda tecnica(HTML) 2 Page - STMicroelectronics

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background image
Symbol
Parameter
Value
Unit
IPP
Peak pulse current
(see note 1)
10/1000
µs
5/310
µs
2/10
µs
40
50
125
A
ITSM
Non repetitive surge peak on-state current
F = 50 Hz
t = 300 ms
t= 1 s
t= 5 s
10
3.5
1
A
ITSM
F = 50 Hz, 60 x 1 s, 2 mn between pulse
1
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
TL
Maximum lead temperature for soldering during 10s
260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb =25
°C)
Note 1 : Pulse waveform :
10/1000
µstr=10µstp=1000µs
5/310
µstr=5µstp=310µs
2/10
µstr=2µstp=10µs
100
50
%I
PP
t
t
rp
0
t
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
170
°C/W
THERMAL RESISTANCES
I
IF
VBO
VRM
IRM
VF
V
Ipp
IH
IBO
VBR
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakagecurrent at stand-offvoltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
VF
Forward voltage drop
VFP
Peak forward voltage
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
αT
Temperature coefficient
ELECTRICAL CHARACTERISTICS
(Tamb =25
°C)
THDT6511D
2/6



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