TS1220 datasheet(3/5 Pages) STMICROELECTRONICS

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P(W)

(A)

T(AV)

180°

Fig 1: Maximum average power dissipation versus

average on-state current.

100

125

Tamb(°C)

P(W)

Tcase (°C)

Rth=0°C/W

125

105

110

115

120

Rth(j-a)=37°C/W

Rth(j-a)=80°C/W

Fig 2: Correlation between maximum average

power dissipation and maximum allowable tem-

peratures (Tamb and Tcase).

Note: Rth=0°C/W is infinite heatsink.

100

125

(A)

T(AV)

D.C.

Tcase(°C)

Fig 3-1: Average and D.C. on-state current versus

case temperature.

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tamb(°C)

(A)

T(AV)

Fig 3-2: Average and D.C. on-state current versus

ambient temperature (device mounted on FR4 with

recommended pad layout).

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

K=[Zth(j-c)/Rth(j-c)]

tp(s)

Fig 4: Relative variation of thermal impedance

junction to case versus pulse duration.

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

K=[Zth(j-a)/Rth(j-a)]

tp(s)

Fig 4-2: Relative variation of thermal impedance

junction to ambient versus pulse duration

(re-

comended pad layout).

TS1220-600B

3/5

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