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TXDV412 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte TXDV412
Spiegazioni elettronici  ALTERNISTORS
PDF  5 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TXDV412 Scheda tecnica(HTML) 3 Page - STMicroelectronics

  TXDV412 Datasheet HTML 1Page - STMicroelectronics TXDV412 Datasheet HTML 2Page - STMicroelectronics TXDV412 Datasheet HTML 3Page - STMicroelectronics TXDV412 Datasheet HTML 4Page - STMicroelectronics TXDV412 Datasheet HTML 5Page - STMicroelectronics  
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375
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10 11
12
0
2
4
6
8
10
12
14
16
18
20
180
O
=180
o
=120
o
=90
o
=60
o
=30
o
T(RMS)
I(A)
P(W)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
16
18
20
-90
-95
-100
-105
-110
-115
-120
-125
P(W)
Tamb(C)
o
Tcase ( C)
o
Rth = 0 C/W
1C/W
2C/W
4C/W
o
o
o
o
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
0
10203040 5060708090 100 110 120 130
0
2
4
6
8
10
12
14
=180
o
Tcase( C)
o
I(A)
T(RMS)
Fig.3 : RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E +2 5E+2
0.01
0.1
1
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
TXDV 412 ---> 812
3/5



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