NTLJS1102P datasheet(4/7 Pages) ONSEMI

Il numero della parte	NTLJS1102P

Spiegazioni elettronici	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	ONSEMI [ON Semiconductor]

Homepage	http://www.onsemi.com

Logo

4 / 7 page

NTLJS1102P

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

4.5

3.5

3.0

2.5

2.0

1.0

0.5

2.25

1.75

1.5

1.0

0.75

0.5

0.25

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

ID, DRAIN CURRENT (A)

4.0

3.0

2.5

2.0

1.5

1.0

0.5

0.02

0.06

0.08

0.10

0.14

0.16

0.20

0.02

0.04

0.06

0.12

0.14

0.18

0.20

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

−25

−50

0.7

0.8

0.9

1.0

1.2

1.3

1.4

1.5

100

1,000

10,000

100,000

1.5

4.0

5.0

VGS = −1.2 V

−1.5 V

−1.8 V

−2.0 V

−2.5 V

−4.5 V

1.25

2.0

2.5

VDS = −5 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

3.5

4.5

0.04

0.12

0.18

TJ = 25°C

ID = −0.2 A

ID = −6.2 A

0.08

0.10

0.16

VGS = −4.5 V

−1.8 V

TJ = 25°C

−1.2 V

−1.5 V

−2.5 V

150

1.1

VGS = −4.5 V

ID = −6.2 A

TJ = 125°C

TJ = 150°C

TJ = 85°C

NTLJS1102P Scheda tecnica(PDF) 4 Page - ON Semiconductor

NTLJS1102P Scheda tecnica(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL