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VND10BSP Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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VND10BSP Scheda tecnica(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage 40 V IOUT Output Current (cont.) at Tc = 85 oC14 A IOUT(RMS) RMS Output Current at Tc = 85 oC and f > 1Hz 14 A IR Reverse Output Current at Tc = 85 oC-14 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT Status Current ±10 mA VESD Electrostatic Discharge (1.5 k Ω, 100 pF) 2000 V Ptot Power Dissipation at Tc = 25 oC 75 W Tj Junction Operating Temperature -40 to 150 oC Tstg Storage Temperature -55 to 150 oC CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS VND10BSP 2/9 |
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