WS57C43C

A10

CS2

GND

CS2

NC

NC

NC

GND

1

2

3

4

5

6

7

8

9

10

11

12

24

23

22

21

20

19

18

17

16

15

14

13

1

43

2

28 27 26

25

24

23

22

21

20

19

5

6

7

8

9

10

11

12 13 14 15 16 17 18

TOP VIEW

Chip Carrier

CERDIP/Plastic DIP

PIN CONFIGURATION

2-31

HIGH SPEED 4K x 8 CMOS PROM/RPROM

KEY FEATURES

— Up to 200 mA

GENERAL DESCRIPTION

The WS57C43C is a High Performance 32K UV Erasable Electrically Re-Programmable Read Only Memory

(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM

speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the

WS57C43C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the

entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which

cannot be erased, every WS5743C in a windowed package is 100% tested with worst case test patterns both

before and after assembly.

The WS57C43C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for

systems which are currently using Bipolar PROMs, or its predecessor, the WS57C43B.

PRODUCT SELECTION GUIDE

PARAMETER

57C43C-25

57C43C-35

57C43C-45

57C43C-55

57C43C-70

Address Access Time (Max)

25 ns

35 ns

45 ns

55 ns

70 ns

CS to Output Valid Time (Max)

12 ns

20 ns

25 ns

25 ns

25 ns

ROW

DECODER

EPROM ARRAY

32,768 BITS

COLUMN

DECODER

SENSE

AMPLIFIERS

8

CS2

OUTPUTS

A0 - A4

COLUMN

ADDRESSES

A5 - A11

ROW

ADDRESSES

7

5

BLOCK DIAGRAM

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