TC1413 datasheet(2/5 Pages) TELCOM

2 / 5 page

4-202

TELCOM SEMICONDUCTOR, INC.

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................... +20V

Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)

Maximum Chip Temperature ................................. +150

°C

Storage Temperature Range ................ – 65

°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300

°C

Package Thermal Resistance

CerDIP RθJ-A ................................................ 150°C/W

CerDIP RθJ-C .................................................. 50°C/W

PDIP RθJ-A ................................................... 125°C/W

PDIP RθJ-C ..................................................... 42°C/W

SOIC RθJ-A ................................................... 155°C/W

SOIC RθJ-C ..................................................... 45°C/W

Operating Temperature Range

C Version ............................................... 0

°C to +70°C

E Version .......................................... – 40

°C to +85°C

Power Dissipation (TA ≤ 70°C)

Plastic ............................................................. 730mW

CerDIP ............................................................800mW

SOIC ...............................................................470mW

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V

≤ VDD ≤ 16V, unless other-

wise specified. Typical values are measured at TA = 25°C; VDD =16V.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

VIH

Logic 1 High Input Voltage

2.0

—

VIL

Logic 0 Low Input Voltage

—

0.8

IIN

Input Current

– 5V

≤ VIN ≤ VDD

TA = 25°C– 1

—

µA

– 40

°C ≤ TA ≤ 85°C

– 10

—

Output

VOH

High Output Voltage

DC Test

VDD – 0.025

—

VOL

Low Output Voltage

DC Test

—

0.025

Output Resistance

VDD = 16V, IO = 10 mA TA = 25°C

—

2.7

Ω

°C ≤ TA ≤ 70°C

—

3.3

– 40

°C ≤ TA ≤ 85°C

—

3.3

IPK

Peak Output Current

VDD = 16V

—

3.0

—

IREV

Latch-Up Protection

Duty Cycle

≤ 2%

0.5

—

Withstand Reverse Current

≤ 300 µsec

Switching Time (Note 1)

Rise Time

Figure 1

TA = 25°C

—

nsec

°C ≤ TA ≤ 70°C

—

– 40

°C ≤ TA ≤ 85°C

—24

Fall Time

Figure 1

TA = 25°C

—

nsec

°C ≤ TA ≤ 70°C

—

– 40

°C ≤ TA ≤ 85°C

—24

tD1

Delay Time

Figure 1

TA = 25°C

—

nsec

°C ≤ TA ≤ 70°C

—

– 40

°C ≤ TA ≤ 85°C

—40

tD2

Delay Time

Figure 1

TA = 25°C

—

nsec

°C ≤ TA ≤ 70°C

—

– 40

°C ≤ TA ≤ 85°C

—40

Power Supply

Power Supply Current

VIN = 3V

—

0.5

1.0

VIN = 0V

—

0.1

0.15

NOTE: 1. Switching times are guaranteed by design.

VDD = 16V

3A HIGH-SPEED MOSFET DRIVERS

TC1413

TC1413N

TC1413 Scheda tecnica(PDF) 2 Page - TelCom Semiconductor, Inc

TC1413 Scheda tecnica(HTML) 2 Page - TelCom Semiconductor, Inc

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL