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BA979 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte BA979
Spiegazioni elettronici  RF PIN Diodes
PDF  5 Pages
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BA979 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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Document Number 85533
Rev. 1.4, 26-Apr-04
VISHAY
BA979/BA979S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 20 mA
VF
1V
Reverse current
VR = 30 V
IR
50
nA
Diode capacitance
f = 100 MHz, VR = 0
CD
0.5
pF
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
rf
50
Ω
Reverse impedance
f = 100 MHz, VR = 0
BA979
zr
5k
Ω
BA979S
zr
9k
Ω
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
τ
4
µs
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Differential Forward Resistance vs. Forward Current
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
95 9735
VF - Forward Voltage(V)
Tamb =25°C
Scattering Limit
0.001
0.01
0.1
1
1
10
100
1000
10000
10
95 9734
IF - Forward Current ( mA )
f>20MHz
Tj =25 °C
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f2
-80
-60
-40
-20
0
20
f2 , modulated with 200 kHz, m = 100% (MHz)
80
60
40
20
0
95 9733
- Circuit with 10 dB Attenuation
V0 =40dBmV
f1 = 100 MHz unmodulated
Π



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