KMBT2222A datasheet(2/3 Pages) KEXIN

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SMD Type

Transistors

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■ Marking

Marking

KMBT2222A

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10 mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

IC = 10 μA, IC = 0

IE = 0; VCB = 60 V

IE = 0; VCB = 60 V; Tj = 125 ℃

μA

Emitter cutoff current

IEBO

IC = 0; VEB = 3 V

IC = 0.1 mA; VCE = 10 V

IC = 1 mA; VCE = 10 V

IC = 10 mA; VCE = 10 V

IC = 10 mA; VCE = 10 V; Ta = -55 ℃

IC= 150 mA; VCE = 10 V

100

300

IC = 150 mA; VCE = 1 V

IC = 500 mA; VCE = 10 V

IC = 150 mA; IB = 15 mA

300

IC = 500 mA; IB = 50 mA

IC = 150 mA; IB = 15 mA

0.6

1.2

IC = 500 mA; IB = 50 mA

Delay time

Rise time

Storage time

IB1 = IB2 = 15 mA,

200

Fall time

IC = 150 mA, VCC = 30V

Output Capacitance

Cobo

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

VEB = 0.5V, f = 1.0MHz, IC = 0

Noise Figure

VCE = 10 V, IC = 100 μA,RS = 1 kΩ, f = 1 kHz

Transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

300

MHz

IB1 = 15 mA, IC = 150 mA,

VCC = 30V, VBE = -0.5 V

Collector cutoff current

collector-emitter saturation voltage

VCEsat

VBEsat

ICBO

base-emitter saturation voltage

hFE

DC current gain

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