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BFQ591 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BFQ591 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 200 mA PC Collector Power Dissipation @TC=25℃ 2.25 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
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