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BU508DW Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU508DW Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU508DW CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V ICES Collector cut-off current VCE=1500V, VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5.0V; IC=0 300 mA hFE DC current gain IC=500mA ; VCE=5V 10 30 VF Diode forward voltage IF=4.5A 1.6 2.0 V fT Transition frequency IE=0.1A ; VCE=5V 7 MHz CC Collector capacitance VCB=10V;IE=0;f=1.0MHz 125 pF |
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