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BU941ZP Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU941ZP Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB B Base Current 1 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 155 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.97 ℃/W isc Website:www.iscsemi.cn |
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