BU808 datasheet(1/2 Pages) ISC

Il numero della parte	BU808

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU808

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 700V(Min)

·High Switching Speed

APPLICATIONS

·Designed for use in three-phase AC motor control systems

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector- Emitter Voltage VBE=0

1500

V

VCEO

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continuous

8

A

IBM

Base Current-Peak

12

A

PC

Collector Power Dissipation

@TC=25℃

160

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.78

℃/W

isc Website：www.iscsemi.cn

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