BU2506DF datasheet(2/2 Pages) ISC

Il numero della parte	BU2506DF

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU2506DF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; IB= 0,L= 25mH

700

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 600mA; IC= 0

7.5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.79A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.79A

1.1

ICES

Collector Cutoff Current

VCE= 1500V ; VBE= 0

VCE= 1500V ; VBE= 0; TC=125℃

1.0

2.0

IEBO

Emitter Cutoff Current

VEB= 7.5V ; IC= 0

208

hFE-1

DC Current Gain

IC= 0.3A ; VCE= 5V

hFE-2

DC Current Gain

IC= 3A; VCE= 5V

3.8

7.5

VECF

C-E Diode Forward Voltage

IF= 3A

2.0

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

Switching times

tstg

Storage Time

6.0

μs

Fall Time

IC= 3A, IB(end)= 0.67A; CFB= 9.4nF

LC= 1.35mH; LB= 8μH; -VBB= 4V;

(-dIB/dt= 0.45A/μs)

0.5

μs

isc Website：www.iscsemi.cn

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