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BD501 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BD501
Spiegazioni elettronici  isc Silicon NPN Power Transistors
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD501 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD501/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min)
80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD501
55
VCBO
Collector-Base Voltage
BD501B
85
V
BD501
50
VCEO
Collector-Emitter Voltage
BD501B
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.39
℃/W
isc Website：www.iscsemi.cn


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