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BU508DX Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU508DX Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DX DESCRIPTION ・With TO-3PML package ・High voltage,high speed ・With integrated efficiency diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A IB Base current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation TC=25℃ 45 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
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