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BDT31AF Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BDT31AF
Spiegazioni elettronici  isc Silicon NPN Power Transistors
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT31AF Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDT31F/AF/BF/CF/DF
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF
80V(Min)- BDT31BF; 100V(Min)- BDT31CF
120V(Min)- BDT31DF
·Complement to Type BDT32F/AF/BF/CF/DF
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT31F
80
BDT31AF
100
BDT31BF
120
BDT31CF
140
VCBO
Collector-Base
Voltage
BDT31DF
160
V
BDT31F
40
BDT31AF
60
BDT31BF
80
BDT31CF
100
VCEO
Collector-Emitter
Voltage
BDT31DF
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
B
Base Current
1
A
PC
Collector Power Dissipation
TC=25℃
22
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.12
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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