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BDW24 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BDW24
Spiegazioni elettronici  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW24 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDW24/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW24
-45
BDW24A
-60
BDW24B
-80
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW24C
IC= -100mA ;IB=0
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -2A; IB= -8mA
B
-2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -6A; IB= -60mA
B
-3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -2A; IB= -8mA
B
-2.5
V
VBE(on)-1
Base-Emitter On Voltage
IC= -1A ; VCE= -3V
-2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= -6A ; VCE= -3V
-3
V
VECF
C-E Diode Forward Voltage
IF= -2A
-1.8
V
BDW24
VCE= -22V; IB= 0
B
BDW24A
VCE= -30V; IB= 0
B
BDW24B
VCE= -40V; IB= 0
B
ICEO
Collector
Cutoff Current
BDW24C
VCE= -50V; IB= 0
B
-0.5
mA
BDW24
VCB= -45V;IE= 0
BDW24A
VCB= -60V;IE= 0
BDW24B
VCB= -80V;IE= 0
ICBO
Collector
Cutoff Current
BDW24C
VCB= -100V;IE= 0
-0.2
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-2
mA
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -2A ; VCE= -3V
750
20000
hFE-3
DC Current Gain
IC= -6A ; VCE= -3V
100
isc Website：www.iscsemi.cn
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