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BUV26AF Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BUV26AF
Spiegazioni elettronici  Silicon NPN Power Transistors
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV26AF Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV26AF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV26AF Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUV26F/AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BUV26F
90
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUV26AF
IC= 0.2A ;IB= 0; L= 25mH
B
100
V
BUV26F
IC= 12A; IB= 1.2A
1.5
VCE(sat)-1
Collector-Emitter
Saturation Voltage
BUV26AF
IC= 10A; IB= 1.0A
1.0
V
BUV26F
IC= 6A; IB= 0.6A
B
0.6
VCE(sat)-2
Collector-Emitter
Saturation Voltage
BUV26AF
IC= 5A; IB= 0.5A
B
0.5
V
BUV26F
IC= 12A; IB= 1.2A
2.0
VBE(sat)-1
Base-Emitter
Saturation Voltage
BUV26AF
IC= 10A; IB= 1.0A
1.5
V
BUV26F
IC= 6A; IB= 0.6A
B
1.2
VBE(sat)-2
Base-Emitter
Saturation Voltage
BUV26AF
IC= 5A; IB= 0.5A
B
1.2
V
ICEX
Collector Cutoff Current
VCE=VCESmax;VBE=-1.5V,TJ=125℃
1.0
mA
ICES
Collector Cutoff Current
VCE=VCESmax;VBE=0,TJ=125℃
3.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0
mA
Switching Times; Resistive Load
ton
Turn-On Time
0.4
0.6
μs
tstg
Storage Time
0.45
1.0
μs
tf
Fall Time
For BUV26F
IC= 12A; IB1= 1.2A; IB2= -2.4A
For BUV26AF
IC= 10A; IB1= 1.0A; IB2= -2.0A
0.12
0.25
μs
isc Website：www.iscsemi.cn
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