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BUV27AF Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV27AF Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV27F/AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUV27F 120 VCEO(SUS) Collector-Emitter Sustaining Voltage BUV27AF IC= 0.2A ;IB= 0; L= 25mH B 150 V BUV27F IC= 8A; IB= 0.8A B 1.5 VCE(sat) Collector-Emitter Saturation Voltage BUV27AF IC= 7A; IB= 0.7A B 1.0 V BUV27F IC= 8A; IB= 0.8A B 2.0 VBE(sat) Base-Emitter Saturation Voltage BUV27AF IC= 7A; IB= 0.7A B 2.0 V ICEX Collector Cutoff Current VCE=VCESmax;VBE=-1.5V,TJ=125℃ 1.0 mA ICES Collector Cutoff Current VCE=VCESmax;VBE=0,TJ=125℃ 3.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA Switching Times; Resistive Load ton Turn-On Time 0.4 0.8 μs tstg Storage Time 0.5 1.2 μs tf Fall Time For BUV27F IC= 8A; IB1= 0.8A; IB2= -1.6A For BUV27AF IC= 7A; IB1= 0.7A; IB2= -1.4A 0.12 0.4 μs isc Website:www.iscsemi.cn 2 |
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