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2SA1601 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1601 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1601 DESCRIPTION Fig.1 simplified outline (ITO-220) and symbol ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A ICM Collector current-Peak -30 A IB B Base current -2 A IBM Base current-Peak -3 A PT Total power dissipation TC=25℃ 45 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 2.77 ℃/W |
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