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2SA940 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA940 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.85 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -0.5A ; VCE= -10V 40 140 fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V;ftest= 1MHz 4 MHz isc Website:www.iscsemi.cn 2 |
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