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2SA1443 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1443 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1443 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-6A , IB=-0.6A;L=1mH -60 V VCEsat-1 Collector-emitter saturation voltage IC=-6A, IB=-0.3A -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-8A, IB=-0.4A -0.5 V VBEsat-1 Base-emitter saturation voltage IC=-6A, IB=-0.3A -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-8A, IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-60V, IE=0 -10 μA ICEX Collector cut-off current VCE=-60V,VBE=1.5V Ta=125℃ -10 -1.0 μA mA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 100 hFE-2 DC current gain IC=-2A ; VCE=-2V 100 400 hFE-3 DC current gain IC=-6A ; VCE=-2V 60 Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 230 pF fT Transition frequency IC=-1A ; VCE=-10V 80 MHz Switching times ton Turn-on time 0.3 μs ts Storage time 1.5 μs tf Fall time IC=-6A ; RL=8.3Ω IB1=- IB2=-0.3A VCC≈-50V 0.3 μs hFE-2 Classifications M L K 100-200 150-300 200-400 2 |
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